The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Dec. 29, 2020
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Yukitaka Hori, Fukuoka, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 29/0623 (2013.01); H01L 29/404 (2013.01); H01L 29/861 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, a first anode electrode, and a second anode electrode. The first anode electrode is disposed on the semiconductor substrate. The second anode electrode is spaced from the first anode electrode on the semiconductor substrate around the first anode electrode. At least any of a first end of the first anode electrode on a second anode electrode side and a second end of the second anode electrode on a first anode electrode side is covered with a SInSiN film.