The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Jun. 07, 2019
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Elizabeth Costner Stewart, Dallas, TX (US);
Jeffrey A. West, Dallas, TX (US);
Thomas D. Bonifield, Dallas, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/07 (2006.01); H01L 29/06 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 27/0733 (2013.01); H01L 29/0649 (2013.01);
Abstract
An electronic device, e.g. integrated circuit, has top and bottom metal plates located over a substrate, the bottom plate located between the top plate and the substrate. A high-stress silicon dioxide layer is located between the bottom plate and the substrate. At least one low-stress silicon dioxide layer is located between the top plate and the bottom plate.