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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11495616 B1

PDFFull Text
Date of Patent:
Nov. 08, 2022

Filed:

Sep. 04, 2020

Multi-tier three-dimensional memory device with dielectric support pillars and methods for making the same

Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Takuya Sakurai, Yokkaichi, JP;

Yoshitaka Otsu, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Andres Munoz

Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11573 (2017.01); H01L 23/522 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 27/11556 (2017.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01); H01L 27/11526 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 29/40117 (2019.08); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01);
Abstract

A semiconductor device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate including a semiconductor material layer, a memory opening and a support opening extending through the alternating stack, a memory opening fill structure located in the memory opening and including a memory film and a semiconductor material portion in contact with the semiconductor material layer, and a support pillar structure located in the support opening. The support pillar structure lacks a semiconductor material portion which is in contact with the semiconductor material layer.

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