The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Jun. 17, 2019
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Takanori Matsuzaki, Kanagawa, JP;

Ryo Tokumaru, Kanagawa, JP;

Ryota Hodo, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10805 (2013.01); H01L 27/10808 (2013.01); H01L 27/10855 (2013.01); H01L 27/10873 (2013.01); H01L 29/66742 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a capacitor, an electrode, and an interlayer film. The transistor includes a semiconductor layer, a gate, a source, and a drain; the transistor and the capacitor are placed to be embedded in the interlayer film. Below the semiconductor layer, one of the source and the drain is in contact with the electrode. Above the semiconductor layer, the other of the source and the drain is in contact with one electrode of the capacitor.


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