The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Sep. 30, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Youngsang Cho, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 23/29 (2006.01); H01L 25/18 (2006.01); H01L 25/10 (2006.01); H01L 23/31 (2006.01); H01L 23/525 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 23/291 (2013.01); H01L 23/293 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/3672 (2013.01); H01L 23/3677 (2013.01); H01L 23/3733 (2013.01); H01L 23/3737 (2013.01); H01L 23/485 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 23/49833 (2013.01); H01L 23/525 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 23/5389 (2013.01); H01L 24/06 (2013.01); H01L 24/20 (2013.01); H01L 25/105 (2013.01); H01L 25/18 (2013.01); H01L 23/49822 (2013.01); H01L 23/5383 (2013.01);
Abstract
A semiconductor package includes: a first package substrate; a first semiconductor device mounted on the first package substrate; a second package substrate arranged on an upper part of the first semiconductor device; and a heat-dissipating material layer arranged between the first semiconductor device and the second package substrate and having a thermal conductivity of approximately 0.5 W/m·K to approximately 20 W/m·K, wherein the heat-dissipating material layer is in direct contact with an upper surface of the first semiconductor device and a conductor of the second package substrate.