The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Nov. 20, 2020
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Jar-Ming Ho, Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3733 (2013.01); H01L 21/02063 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02375 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05157 (2013.01); H01L 2224/05164 (2013.01);
Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first pad positioned above the substrate, and a first redistribution structure including a first redistribution conductive layer positioned on the first pad and a first redistribution thermal release layer positioned on the first redistribution conductive layer. The first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm/Watt and about 0.25° C. cm/Watt.