The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Oct. 19, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Benjamin Colombeau, San Jose, CA (US);
Hans-Joachim Gossmann, Summit, NJ (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823412 (2013.01); H01L 21/0245 (2013.01); H01L 21/02532 (2013.01); H01L 21/324 (2013.01); H01L 29/0669 (2013.01); H01L 29/42392 (2013.01);
Abstract
Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a doped semiconductor material between source regions and drain regions of the device. The method includes doping semiconductor material layers between source regions and drain regions of an electronic device.