The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Jun. 02, 2020
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Jihwan Kim, Seoul, KR;

Sangmuk Oh, Gyeonggi-do, KR;

Donguk Lee, Seoul, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/822 (2006.01); G01R 31/26 (2020.01); G01R 31/28 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8221 (2013.01); G01R 31/2642 (2013.01); G01R 31/2824 (2013.01); G01R 31/2831 (2013.01); G01R 31/2884 (2013.01); H01L 22/34 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device may include: first to n-th through-electrodes; first to n-th through-electrode driving circuits suitable for charging the first to n-th through-electrodes to a first voltage level, or discharging the first to n-th through-electrodes to a second voltage level; and first to n-th error detection circuits, each suitable for storing the first voltage level or the second voltage level of a corresponding through-electrode of the first to n-th through-electrodes as a down-detection signal and an up-detection signal, and outputting a corresponding error detection signal of first to n-th error detection signals by sequentially masking the down-detection signal and the up-detection signal.


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