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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11495495 B1

PDFFull Text
Date of Patent:
Nov. 08, 2022

Filed:

Oct. 01, 2020

Method of manufacturing semiconductor device having a structure pattern having a plurality of trenches

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Geun-Won Lim, Yongin-si, KR;

Myung-Keun Lee, Seoul, KR;

Seok-Cheon Baek, Hwaseong-si, KR;

Kyeong-Jin Park, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

F. Chau & Associates, LLC

Primary Examiner:

Jaehwan Oh

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 27/1157 (2017.01); H01L 27/11573 (2017.01); H01L 27/11582 (2017.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/76805 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 27/1157 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 29/1037 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/31144 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming a base layer on a substrate. A structure layer is Conned on the base layer. The structure layer includes at least one material layer. A structure pattern is formed on the base layer. The structure pattern includes a first trench extending in a first direction and a second trench having a cross portion extending in a second direction that is perpendicular to the first direction. The second trench is connected to the first trench. The structure pattern further includes a base pattern having a recess portion recessed downward from a surface of the base layer at the cross portion of the second trench.

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Lim, Geun-Won. (2022). Method of manufacturing semiconductor device having a structure pattern having a plurality of trenches (U.S. Patent No. 11495495). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11495495

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