The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Jan. 07, 2021
Applicant:
Nec Corporation, Tokyo, JP;
Inventor:
Tomo Tanaka, Tokyo, JP;
Assignee:
NEC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 31/0352 (2006.01); H01L 27/146 (2006.01); H01L 31/18 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02527 (2013.01); H01L 27/146 (2013.01); H01L 29/045 (2013.01); H01L 29/1606 (2013.01); H01L 31/035272 (2013.01); H01L 31/18 (2013.01);
Abstract
In order to enable simple removal of a substrate used for manufacturing a semiconductor element, a manufacturing method includes forming a graphene layer on a substrate portion formed of a semiconductor, forming an element portion on the graphene layer, the element portion including a semiconductor layer directly formed on the graphene layer, which takes over crystal information relating to the substrate portion when the semiconductor layer is formed on the substrate portion without intermediation of the graphene layer, and performing cutting-off between the substrate portion and the element portion at the graphene layer.