The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

May. 20, 2020
Applicant:

Rohm and Haas Electronic Materials Korea Ltd., Chungcheongnam-do, KR;

Inventors:

Seung-Keun Kim, Gyeonggi-do, KR;

Hyung-Tak Jeon, Gyeonggi-do, KR;

Kyu Cheol Lee, Gyeonggi-do, KR;

Kyung-Jae Park, Gyeonggi-do, KR;

Seung-Kyu Song, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/09 (2006.01); G03F 7/38 (2006.01); C08K 5/34 (2006.01); C08K 5/33 (2006.01); C08K 5/11 (2006.01); C08F 220/32 (2006.01); C08F 220/24 (2006.01); C08F 220/18 (2006.01); C08F 220/06 (2006.01); C08F 222/40 (2006.01); C08F 212/08 (2006.01); C08K 5/00 (2006.01); C08K 3/04 (2006.01); G02F 1/13 (2006.01); G03F 7/40 (2006.01); B82Y 20/00 (2011.01); C08K 5/3492 (2006.01); G03F 7/028 (2006.01); G02F 1/13357 (2006.01); G02F 1/1335 (2006.01);
U.S. Cl.
CPC ...
G03F 7/094 (2013.01); C08F 212/08 (2013.01); C08F 220/06 (2013.01); C08F 220/1804 (2020.02); C08F 220/24 (2013.01); C08F 220/325 (2020.02); C08F 222/40 (2013.01); C08K 3/04 (2013.01); C08K 5/0041 (2013.01); C08K 5/11 (2013.01); C08K 5/33 (2013.01); C08K 5/3492 (2013.01); G02F 1/133516 (2013.01); G02F 1/133617 (2013.01); G03F 7/028 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); B82Y 20/00 (2013.01);
Abstract

The present invention relates to a structure for a quantum dot barrier rib and a process for preparing the same. The structure for a quantum dot barrier rib of the present invention comprises a cured film having a uniform film thickness and an appropriate range of film thickness. Here, the reflectance Rmeasured by the SCI (specular component included) method and the reflectance Rmeasured by the SCE (specular component excluded) method are reduced, and the ratio between them (R/R) is appropriately adjusted, so that it is possible to satisfy such characteristics as high light-shielding property and low reflectance at the same time while the resolution and pattern characteristics are maintained to be excellent. In addition, when the structure for a quantum dot barrier rib is prepared, it is possible to form a multilayer pattern having a uniform film thickness suitable for the quantum dot barrier ribs in a single development process. Thus, it can be advantageously used for a quantum dot display.


Find Patent Forward Citations

Kim, Seung-Keun. (2022). Structure for a quantum dot barrier rib and process for preparing the same (U.S. Patent No. 11493847). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11493847

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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