The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Jul. 31, 2018
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Glen Harold Kirby, Liberty Township, OH (US);

Justin Michael Nagy, Newport, KY (US);

John Tam Nguyen, Cincinnati, OH (US);

Jeffery Allen Bross, Liberty Township, OH (US);

Brian Harvey Pilsner, Mason, OH (US);

Robert Martin Fecke, Franklin, OH (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 14/00 (2006.01); C04B 41/00 (2006.01); C04B 41/50 (2006.01); F01D 5/28 (2006.01); C23C 28/00 (2006.01); C23C 30/00 (2006.01);
U.S. Cl.
CPC ...
C04B 41/009 (2013.01); C04B 41/5024 (2013.01); C04B 41/5096 (2013.01); C23C 28/321 (2013.01); C23C 28/345 (2013.01); C23C 30/00 (2013.01); F01D 5/288 (2013.01); F05D 2300/6033 (2013.01);
Abstract

Methods for forming a coated component, along with the resulting coated components, are provided. The method may include forming a silicon-based bond coating on a surface of a substrate and forming a barrier coating on the silicon-based bond coating. The silicon-based bond coating comprises columnar grains of crystalline silicon. Chemical vapor depositing (CVD) may be used to form the silicon-based bond coating through CVD of a silicon-containing precursor at a deposition temperature and deposition pressure that causes crystallization of the silicon material during the deposition of the silicon-based bond coating. The silicon-containing precursor may be silane, monochlorosilane, dichlorosilane, and/or trichlorosilane.


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