The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Sep. 04, 2018
Applicant:

Pharmafluidics NV, Ghent, BE;

Inventors:

Wim De Malsche, Berchem, BE;

Jeff Op De Beeck, Mariakerke, BE;

Paul Jacobs, Lokeren, BE;

Bo Claerebout, Kortrijk, BE;

Assignee:

PHARMAFLUIDICS NV, Ghent, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J 20/10 (2006.01); B01J 19/00 (2006.01); B01J 20/28 (2006.01); B01J 20/282 (2006.01); B01J 20/30 (2006.01);
U.S. Cl.
CPC ...
B01J 20/10 (2013.01); B01J 19/0093 (2013.01); B01J 20/282 (2013.01); B01J 20/28028 (2013.01); B01J 20/3085 (2013.01); B01J 2219/00846 (2013.01); B01J 2220/54 (2013.01); B01J 2220/82 (2013.01);
Abstract

A method for producing a chemical reactor device based on a fluid flow comprises obtaining a substrate with a fluid channel defined by a channel wall, in which an ordered set of silicon pillar structures is positioned in the fluid channel and electrochemically anodising at least the silicon pillar structures to make the silicon pillar structures porous at least to a certain depth. After the anodising, the substrate and pillar structures are thermally treated, the treatment being carried out at a temperature, with a duration and in an atmosphere such that any silicon oxide layer formed has a thickness of less than 20 nm. The substrate and the pillar structures are further functionalized.


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