The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Aug. 10, 2021
Applicant:

Fast Sic Semiconductor Incorporated, Hsinchu, TW;

Inventors:

Cheng-Tyng Yen, Hsinchu, TW;

Fu-Jen Hsu, Hsinchu, TW;

Hsiang-Ting Hung, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/082 (2006.01); H03K 17/687 (2006.01); H03K 17/567 (2006.01); H03K 17/60 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/60 (2013.01); H03K 17/0826 (2013.01); H03K 17/165 (2013.01); H03K 17/567 (2013.01);
Abstract

A power transistor module includes a power transistor device and a control circuit. The control circuit is electrically connected to the power transistor device for providing at least one gate voltage to drive the power transistor device, and adjusting the at least one gate voltage in response to an output power of the power transistor module. When the output power is greater than a predetermined power load, the at least one gate voltage has a first swing amplitude; and when the output power is less than or equal to the predetermined power load the at least one gate voltage has a second swing amplitude less than the first swing amplitude.


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