The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Jun. 18, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

John Collins, Tarrytown, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Bucknell C. Webb, Ossining, NY (US);

Paul S. Andry, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 50/10 (2021.01); H01M 4/505 (2010.01); H01M 10/0565 (2010.01); H01L 23/58 (2006.01); H01L 23/00 (2006.01); H01M 50/116 (2021.01); H01M 50/172 (2021.01); H01M 50/531 (2021.01);
U.S. Cl.
CPC ...
H01M 50/10 (2021.01); H01L 23/564 (2013.01); H01L 23/58 (2013.01); H01M 4/505 (2013.01); H01M 10/0565 (2013.01); H01M 50/116 (2021.01); H01M 50/172 (2021.01); H01M 50/531 (2021.01); H01M 2300/0082 (2013.01);
Abstract

An energy storage device sits within a trench with electrically insulated sides within a substrate. Within the trench there is an anode, an electrolyte disposed on the anode, and a cathode structure disposed on the electrolyte. Variations of an electrically conductive contact are disposed on and in electrical contact with the cathode structure. At least part of the conductive contact is disposed within the trench and the conductive contact partially seals the anode, electrolyte, and cathode structure within the trench. Conductive and/or non-conductive adhesives are used to complete the seal thereby enabling full working electrochemical devices where singulation of the devices from the substrate enables high control of device dimensionality and footprint.


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