The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Jun. 19, 2020
Applicant:

Lextar Electronics Corporation, Hsinchu, TW;

Inventors:

Shiou-Yi Kuo, Hsinchu, TW;

Jian-Chin Liang, Hsinchu, TW;

Chien-Nan Yeh, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 33/42 (2010.01); H01L 33/22 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 33/22 (2013.01); H01L 33/42 (2013.01); H01L 33/62 (2013.01);
Abstract

A light emitting device includes a first light emitting cell and a second light emitting cell. Each light emitting cell includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers. The second semiconductor layer of the second light emitting cell has an exposed surface. A transparent bonding layer is located between the first and second light emitting cells. A hole is formed on the first and second light emitting cells and the transparent bonding layer. A first route metal is located on a sidewall of the hole and electrically coupled to the second semiconductor layer of the first light emitting cell and the first semiconductor layer of the second light emitting cell. The active layer of the second light emitting cell has an area greater than the active layer of the first light emitting cell.


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