The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Aug. 04, 2020
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Seong Kyu Jang, Ansan-si, KR;

Hong Suk Cho, Ansan-si, KR;

Kyu Ho Lee, Ansan-si, KR;

Chi Hyun In, Ansan-si, KR;

Assignee:

Seoul Viosys Co. Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/02 (2010.01); H01L 33/62 (2010.01); H01L 33/44 (2010.01); H01L 33/48 (2010.01); H01L 23/00 (2006.01); H01L 33/46 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/02 (2013.01); H01L 24/81 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/48 (2013.01); H01L 33/62 (2013.01); H01L 33/405 (2013.01); H01L 2924/12041 (2013.01);
Abstract

A light emitting device including a substrate, a first semiconductor layer disposed on the substrate, a mesa including a second semiconductor layer and an active layer disposed on the first semiconductor layer, a first contact electrode contacting the first semiconductor layer, a second contact electrode contacting the second semiconductor layer, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode, and including a first opening disposed on the first contact electrode and a second opening disposed on the second contact electrode, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, and the first contact electrode includes an alloy layer.


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