The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Oct. 12, 2020
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Yasuhiro Okamoto, Tokyo, JP;
Nobuo Machida, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/0696 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/0834 (2013.01); H01L 29/41708 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/66348 (2013.01); H01L 29/7396 (2013.01); H01L 29/7397 (2013.01);
Abstract
To improve an on-resistance of a semiconductor device. A plurality of collector regions are formed at a predetermined interval on a bottom surface of a drift layer made of SiC. Next, on the bottom surface of the drift layer, both of the drift layer and a collector region via a silicide layer are connected to a collector electrode.