The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Nov. 06, 2020
Power Master Semiconductor Co., Ltd., Bucheon-si, KR;
Jaegil Lee, Incheon, KR;
Sangtae Han, Incheon, KR;
POWER MASTER SEMICONDUCTOR CO., LTD., Bucheon-si, KR;
Abstract
A semiconductor device is provided. A semiconductor device includes: a first semiconductor layer having an N-type conductivity; and a second semiconductor layer that is formed on the first semiconductor layer, wherein an active region is defined in the first semiconductor layer and the second semiconductor layer, the active region includes a plurality of first P pillars and a plurality of first N pillars alternately arranged along a first direction, in the active region, an upper pillar region including an upper region of the plurality of first P pillars and an upper region of the plurality of first N pillars, a lower pillar region including a lower region of the plurality of first P pillars and a lower region of the plurality of first N pillars, and a middle pillar region formed between the upper pillar region and the lower pillar region are defined, the entire charge amount of the upper pillar region is greater than the entire charge amount of the lower pillar region, and a P-type charge amount is greater than an N-type charge amount in the upper pillar region, while the N-type charge amount is greater than the P-charge amount in the lower pillar region.