The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Sep. 25, 2018
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Elisa Vianello, Grenoble, FR;

Catherine Carabasse, Coublevie, FR;

Selina La Barbera, Grenoble, FR;

Raluca Tiron, Saint-Martin-le-Vinoux, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06N 3/04 (2006.01); G06N 3/063 (2006.01); H01L 21/027 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 21/3213 (2006.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2472 (2013.01); G06N 3/0445 (2013.01); G06N 3/0635 (2013.01); H01L 21/0271 (2013.01); H01L 21/32 (2013.01); H01L 21/3213 (2013.01); H01L 45/1253 (2013.01); H01L 45/16 (2013.01); H01L 2224/3016 (2013.01); H01L 2224/3316 (2013.01);
Abstract

A method of producing a recurrent neural network computer includes consecutive steps of providing a substrate with a first electrode; structuring the first electrode by etching using a first mask made of block copolymers, such that said electrode has free regions which are randomly spatially distributed; forming a resistive-RAM-type memory layer on the first structured electrode; forming a second electrode on the memory layer; and structuring the second electrode by etching, using a second mask made of block copolymers such that said electrode has free regions which are randomly spatially distributed.


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