The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Jan. 06, 2020
Qualcomm Incorporated, San Diego, CA (US);
Biay-Cheng Hseih, Irvine, CA (US);
Sergiu Radu Goma, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Aspects of the present disclosure relate to an image sensor. An example apparatus includes an image sensor including one or more pixels. Each pixel of the one or more pixels includes a photodetector, and the photodetector includes a photosensitive surface including germanium. In some implementations, the photodetector includes a photodiode including an intrinsic silicon layer doped with germanium or including germanium crystals. The intrinsic layer may be between a p− layer and an n− layer not including germanium. The intrinsic layer may be configured to absorb photons of the light received at the intrinsic layer. The light may include one or more reflections of an emitted light for active depth sensing. For example, the emitted light may be frequency modulated and having a first wavelength for indirect time-of-flight depth sensing. Sampling circuits may generate voltages indicating a phase difference between the emitted light and a reflection of the emitted light.