The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Apr. 20, 2020
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Assignee:
CANON KABUSHIKI KAISHA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/1463 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14625 (2013.01); H01L 27/14627 (2013.01); H01L 27/14634 (2013.01); H01L 27/14643 (2013.01); H01L 27/14683 (2013.01); H01L 23/481 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 24/08 (2013.01); H01L 2224/0812 (2013.01); H01L 2224/08135 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/80001 (2013.01); H01L 2224/80894 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01);
Abstract
A semiconductor apparatus configured to decrease occurrence of exfoliation between a conductor layer and an insulator layer is provided. A first region containing silicon and copper is disposed between a first conductor portion and a first insulator portion. A second region containing silicon and copper is disposed between a second conductor portion and a second insulator portion. The first region has a maximum nitrogen concentration higher than that of the second region.