The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Mar. 05, 2020
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventor:

Yasunori Oshima, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 21/8234 (2006.01); G11C 5/06 (2006.01); G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 21/823412 (2013.01); H01L 27/11582 (2013.01);
Abstract

In one embodiment, a semiconductor storage device includes a substrate, a stacked film including a plurality of first insulating layers and a plurality of electrode layers that are alternately provided on the substrate, and a second insulating layer provided on the stacked film. The device further includes a plurality of pillar portions, each of which including a first insulator, a charge storage layer, a second insulator, a first semiconductor layer and a third insulator that are sequentially provided in the stacked film and the second insulating layer. Furthermore, a width of the second insulating layer sandwiched between the pillar portions is narrower than a width of the stacked film sandwiched between the pillar portions, in at least a portion of the second insulating layer.


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