The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Nov. 30, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Te-Yin Chen, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/76841 (2013.01); H01L 23/5252 (2013.01); H01L 23/5254 (2013.01); H01L 23/53266 (2013.01);
Abstract

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first conductive layer positioned above the substrate, a bottom conductive layer positioned above the first conductive layer and electrically coupled to the first conductive layer, a programmable insulating layer positioned on the bottom conductive layer, a top conductive layer positioned on the programmable insulating layer, and a redistribution structure positioned above the first conductive layer and electrically coupled to the first conductive layer. The bottom conductive layer, the programmable insulating layer, and the top conductive layer together configure a programmable unit.


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