The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Dec. 08, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Teng-Yen Huang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/7682 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76865 (2013.01); H01L 21/76895 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 27/10805 (2013.01);
Abstract

The present disclosure provides a semiconductor device structure with a manganese-containing conductive plug and a method for forming the semiconductor device structure. The semiconductor device structure includes a first conductive layer disposed over a semiconductor substrate, and a dielectric layer disposed over the first conductive layer. The semiconductor device structure also includes a first conductive plug penetrating through the dielectric layer and in a pattern-dense region, and a lining layer covering the dielectric layer and the first conductive plug. The lining layer and the first conductive plug include manganese. The semiconductor device structure further includes a second conductive plug penetrating through the lining layer and the dielectric layer and in a pattern-loose region. The second conductive plug is separated from the dielectric layer by a portion of the lining layer. In addition, the semiconductor device structure includes a second conductive layer covering the lining layer and the second conductive plug.


Find Patent Forward Citations

Huang, Teng-Yen. (2022). Semiconductor device structure with manganese-containing conductive plug and method for forming the same (U.S. Patent No. 11488905). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11488905

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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