The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Sep. 19, 2017
Samar K. Saha, Milpitas, CA (US);
Samar K. Saha, Milpitas, CA (US);
Other;
Abstract
A transistor structure can include a semiconductor-on-insulator substrate that includes an upper substrate region separated from a lower substrate region by a buried insulator. Shallow halo implant regions can be formed in an upper substrate region having a peak concentration at a first depth within the upper substrate region. Deep halo implant regions can be formed in the upper substrate region having a peak concentration at a second depth lower than the first depth. An epitaxial layer can be formed on top of the upper substrate region and below the control gate. Source and drain regions both of a second conductivity type formed in at least the epitaxial layer. In some embodiments, a lower substrate region can be biased for a double-gate effect.