The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Nov. 27, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wonjae Shin, Seoul, KR;

Nam Hyung Kim, Suwon-si, KR;

Dae-Jeong Kim, Seoul, KR;

Do-Han Kim, Hwaseong-si, KR;

Minsu Kim, Seongnam-si, KR;

Deokho Seo, Suwon-si, KR;

Yongjun Yu, Suwon-si, KR;

Changmin Lee, Hwaseong-si, KR;

Insu Choi, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/10 (2006.01); G06F 11/16 (2006.01); G06F 11/30 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 11/1004 (2013.01); G06F 11/1658 (2013.01); G06F 11/3037 (2013.01);
Abstract

A method for accessing a memory module includes; encoding first data of a first partial burst length to generate first parities and first cyclic redundancy codes, encoding second data of a second partial burst length to generate second parities and second cyclic redundancy codes, writing the first data and the second data to first memory devices, and writing the first parities, the first cyclic redundancy codes, the second parities, and the second cyclic redundancy codes to a second memory device and a third memory device.


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