The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Dec. 10, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Younghoon Sohn, Incheon, KR;

Yusin Yang, Seoul, KR;

Chihoon Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); H01L 21/67 (2006.01); G01N 21/45 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9505 (2013.01); G01N 21/45 (2013.01); H01L 21/67288 (2013.01);
Abstract

Disclosed are a substrate inspection method and a method of fabricating a semiconductor device using the same. The inspection method may include measuring a target area of a substrate using a pulsed beam to obtain a first peak, measuring a near field ultrasound, which is produced by the pulsed beam in a near field region including the target area, using a first continuous wave beam different from the pulsed beam to obtain a second peak, and measuring a far field ultrasound, which is produced by the near field ultrasound in a far field region outside the near field region, using a second continuous wave beam to examine material characteristics of the substrate.


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