The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Aug. 31, 2018
Trs Technologies, Inc., State College, PA (US);
The Penn State Research Foundation, University Park, PA (US);
Jun Luo, State College, PA (US);
Wesley S. Hackenberger, State College, PA (US);
Fei Li, State College, PA (US);
Shujun Zhang, State College, PA (US);
Thomas R. Shrout, Pennsylvania Furnace, PA (US);
TRS TECHNOLOGIES, INC., State College, PA (US);
THE PENN STATE RESEARCH FOUNDATION, University Park, PA (US);
Abstract
A relaxor-PT based piezoelectric crystal is disclosed, comprising the general formula of (PbM){[(M,M)(M,M)]Ti}O, wherein: M is a rare earth cation; Mis selected from the group consisting of Mg, Zn, Yb, Sc, and In; Mis Nb; Mis selected from the group consisting of Mg, Zn, Yb, Sc, In, and Zr; Mis Nbor Zr; 0<x≤0.05; 0.02<y<0.7; and 0≤z≤1, provided that if either Mor Mis Zr, both Mand Mare Zr. A method for forming the relaxor-PT based piezoelectric crystal is disclosed, comprising pre-synthesizing precursor materials by calcining mixed oxides, mixing the precursor materials with single oxides and calcining to form a feeding material, and growing the relaxor-PT based piezoelectric crystal having the general formula of (PbM){[(M,M)(M,M)]Ti}Ofrom the feeding material by a Bridgman method.