The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Aug. 31, 2018
Applicant:

Pilkington Group Limited, Lathom, GB;

Inventors:

Lila Raj Dahal, Perrysburg, OH (US);

Douglas Martin Nelson, Curtice, OH (US);

Jun Ni, Maumee, OH (US);

David Alan Strickler, Toledo, OH (US);

Srikanth Varanasi, Ottawa Hills, OH (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C03C 17/245 (2006.01); C23C 16/453 (2006.01); C23C 16/54 (2006.01);
U.S. Cl.
CPC ...
C03C 17/245 (2013.01); C23C 16/402 (2013.01); C23C 16/453 (2013.01); C23C 16/545 (2013.01); C03C 2217/213 (2013.01); C03C 2218/1525 (2013.01);
Abstract

A chemical vapor deposition process for forming a silicon oxide coating includes providing a moving glass substrate. A gaseous mixture is formed and includes a silane compound, a first oxygen-containing molecule, a radical scavenger, and at least one of a phosphorus-containing compound and a boron-containing compound. The gaseous mixture is directed toward and along the glass substrate. The gaseous mixture is reacted over the glass substrate to form a silicon oxide coating on the glass substrate at a deposition rate of 150 nm*m/min or more.


Find Patent Forward Citations

Loading…