The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Jul. 09, 2018
Applicant:

Heraeus Quarzglas Gmbh & Co. KG, Hanau, DE;

Inventors:

Christian Schenk, Ingelheim, DE;

Nadine Tscholitsch, Hanau, DE;

Thomas Baier, Hanau, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03B 32/02 (2006.01); C03B 20/00 (2006.01); C03B 19/06 (2006.01); C03C 17/00 (2006.01);
U.S. Cl.
CPC ...
C03B 20/00 (2013.01); C03B 19/066 (2013.01); C03B 32/02 (2013.01); C03C 17/00 (2013.01); C03C 17/007 (2013.01); C03C 17/008 (2013.01); C03B 2201/50 (2013.01); C03C 2217/425 (2013.01); C03C 2217/45 (2013.01); C03C 2217/478 (2013.01);
Abstract

In a known method for producing a quartz glass component, a crystal formation layer containing a crystallization promoter is produced on a coating surface of a base body of quartz glass. Starting therefrom, to provide a method for producing a quartz glass component of improved thermal strength and long-term stability which displays a comparatively small deformation particularly also in the case of rapid heating-up processes, it is suggested according to one aspect that a porous crystal formation layer containing amorphous SiOparticles is produced with a mean thickness in the range of 0.1 to 5 mm, and that a substance which contains cesium and/or rubidium is used as the crystallization promoter.


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