The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2022

Filed:

Mar. 29, 2019
Applicant:

Taiyo Yuden Co., Ltd., Tokyo, JP;

Inventors:

Kuniaki Tanaka, Tokyo, JP;

Tokihiro Nishihara, Tokyo, JP;

Tomonori Yamatoh, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/18 (2006.01); C30B 29/40 (2006.01); H03H 9/17 (2006.01); H03H 9/58 (2006.01); H03H 3/02 (2006.01); H01L 41/08 (2006.01);
U.S. Cl.
CPC ...
H01L 41/18 (2013.01); C30B 29/403 (2013.01); H01L 41/0805 (2013.01); H03H 3/02 (2013.01); H03H 9/173 (2013.01); H03H 9/581 (2013.01); H03H 2003/021 (2013.01);
Abstract

Provided is an aluminum nitride film in which, aluminum nitride crystal grains containing a metal element differing from aluminum and substituting for aluminum are main crystal grains of a polycrystalline film formed of crystal grains, and a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in at least one region of first and second regions corresponding to both end portions of the polycrystalline film in a film thickness direction of the polycrystalline film is higher than a concentration of the metal element in a center region of the aluminum nitride crystal grain in the at least one region, and is higher than a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in a third region located between the first region and the second region in the film thickness direction of the polycrystalline film.


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