The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Dec. 22, 2020
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/58 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/40 (2010.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01); G02B 5/00 (2006.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/405 (2013.01); H01L 51/5218 (2013.01); H01L 51/5262 (2013.01); H01L 51/56 (2013.01); G02B 5/008 (2013.01); H01L 2251/5369 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0083 (2013.01);
Abstract
The invention relates to a method for producing a light-emitting diode comprising a semiconductor stack formed of a first layerof an active layerand of an extraction layerIt comprises a step of determining a distance hbetween emitting dipoles μthat are located in the active layerand the extraction layersuch that the emitting dipoles μof vertical orientation have in particular a lifetime longer than that of the emitting dipoles of horizontal orientation.