The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Feb. 16, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Hideto Sugawara, Nonoichi Ishikawa, JP;
Takanobu Kamakura, Yokosuka Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor light-emitting device includes first and second semiconductor layers and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer includes a compound semiconductor represented by a compositional formula AlGaAs (0<X<1). The first semiconductor layer has an n-type conductivity and includes a first impurity of the n-type. The first layer further includes carbon with a lower concentration than a concentration of the first impurity, and oxygen with a lower concentration than the concentration of the first impurity. The second semiconductor layer includes a compound semiconductor represented by a compositional formula AlYGa1-YAs (0<Y<1). The second semiconductor layer has a p-type conductivity and including a second impurity of the p-type. The second semiconductor layer further includes carbon with a concentration substantially equal to the carbon concentration in the first semiconductor layer.