The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Jan. 04, 2019
Applicant:
Leonardo MW Limited, Essex, GB;
Inventors:
Les Hipwood, Essex, GB;
Sudesh Bains, Essex, GB;
Assignee:
LEONARDO UK LTD, London, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01); H01L 31/18 (2006.01); H01L 27/144 (2006.01); H01L 31/0296 (2006.01); H01L 31/101 (2006.01); H01L 31/103 (2006.01); H01L 31/11 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1832 (2013.01); H01L 27/1443 (2013.01); H01L 31/02966 (2013.01); H01L 31/1013 (2013.01); H01L 31/1032 (2013.01); H01L 31/11 (2013.01);
Abstract
Mercury cadmium telluride (MCT) dual band photodiode elements are described that include an n-type barrier region interposed between first and second p-type regions. The first p-type region is arranged to absorb different IR wavelengths to the second p-type region in order that the photodiode element can sense two IR bands. A portion of the second p-type region is type converted using ion-beam milling to produce a n-type region that interfaces with the second p-type region and the n-type barrier region.