The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Jun. 28, 2019
Applicant:
Lg Electronics Inc., Seoul, KR;
Inventors:
Jaewon Chang, Seoul, KR;
Kyungjin Shim, Seoul, KR;
Hyunjung Park, Seoul, KR;
Junghoon Choi, Seoul, KR;
Assignee:
LG ELECTRONICS INC., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/0747 (2012.01); H01L 31/18 (2006.01); H01L 21/48 (2006.01); C23C 16/24 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02167 (2013.01); H01L 31/0747 (2013.01); H01L 31/186 (2013.01); H01L 31/1864 (2013.01); H01L 31/1868 (2013.01); C23C 16/24 (2013.01); H01L 21/4867 (2013.01); Y02E 10/50 (2013.01);
Abstract
A method for manufacturing a solar cell, includes providing a silicon substrate, forming an oxide layer on a first surface of the silicon substrate, forming a doped polycrystalline silicon layer on the oxide layer, forming a passivation layer on the doped polycrystalline silicon layer, printing a metal paste on the passivation layer, and forming a metal contact connected to the doped polycrystalline silicon layer by firing the metal paste to penetrate the passivation layer.