The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2022

Filed:

Aug. 26, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Hiroyuki Kanaya, Kanagawa, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); G11C 8/14 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 45/00 (2006.01); G11C 7/18 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); G11C 7/18 (2013.01); G11C 8/14 (2013.01); G11C 11/1659 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); G11C 2213/52 (2013.01); G11C 2213/76 (2013.01);
Abstract

A semiconductor memory device has a first wiring extending in a first direction and a second wiring extending in a second direction. The first and second wirings are spaced from each other in a third direction. The second wiring has a first recess facing the first wiring. A resistance change memory element is connected between the first and second wirings. A conductive layer is between the resistance change memory element and the second wiring and includes a first protrusion facing the second wiring. A switching portion is between the conductive layer and the second wiring and includes a second recess facing the conductive layer and a second protrusion facing the second wiring. The first protrusion is in the second recess. The second protrusion is in the first recess. The switching portion is configured to switch conductivity state according to voltage between the first wiring and the second wiring.


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