The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Apr. 06, 2018
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Takeshi Yanagita, Tokyo, JP;
Tomohiko Asatsuma, Kanagawa, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Abstract
A solid-state imaging device includes an imaging element group in which imaging elements each having a photoelectric conversion portionformed on or above a semiconductor substrateand further having a wire grid polarizerand an on-chip microlensare arrayed in a two-dimensional matrix, and a first interlayer insulating layerand a second interlayer insulating layerprovided on a light incident side of the photoelectric conversion portions. The wire grid polarizeris provided between the first interlayer insulating layerand the second interlayer insulating layer, and the on-chip microlensis provided on the second interlayer insulating layer. The first interlayer insulating layerand the second interlayer insulating layerinclude an oxide material or a resin material, and the on-chip microlens includes SiN or SiON.