The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Dec. 21, 2020
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Chih-Hung Chen, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); G11C 5/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1087 (2013.01); G11C 5/10 (2013.01); H01L 27/10823 (2013.01);
Abstract
The present disclosure provides a method for manufacturing a semiconductor structure with capacitor landing pads. The method includes the following operations: providing a semiconductor substrate; forming a bit line structure protruding from the semiconductor substrate; depositing a landing pad layer to cover the bit line structure; planarizing a top surface of the landing pad layer; limning a trench in the landing pad layer to form the capacitor landing pads; forming an air gap within a sidewall of the bit line structure; and filling a first dielectric layer in the trench to seal the air gap.