The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Aug. 31, 2020
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventor:
Keiichi Niwa, Yokkaichi Mie, JP;
Assignee:
KIOXIA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 25/065 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/16 (2013.01); H01L 21/4853 (2013.01); H01L 21/563 (2013.01); H01L 23/3185 (2013.01); H01L 23/49838 (2013.01); H01L 25/0657 (2013.01); H01L 2224/16238 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06575 (2013.01); H01L 2225/06586 (2013.01); H01L 2924/18161 (2013.01);
Abstract
A semiconductor device includes a substrate that includes a first insulating layer, a conductive layer on the first insulating layer, a second insulating layer on the conductive layer, and an opening that passes through the conductive layer and the second insulating layer and in which part of the conductive layer is exposed, a conductive material that contacts at least the first insulating layer and the part of the conductive layer in the opening, and a semiconductor chip that has an electrode extending towards the first insulating layer within the opening and contacting the conductive material.