The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2022

Filed:

Mar. 16, 2020
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Akihiro Sato, Toyama, JP;

Daisuke Hara, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); H01L 21/67 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/45536 (2013.01); C23C 16/505 (2013.01); H01J 37/32 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01J 37/32834 (2013.01); H01L 21/67017 (2013.01); C23C 16/4412 (2013.01); C23C 16/45502 (2013.01); H01L 21/67 (2013.01);
Abstract

A substrate processing apparatus includes: a process chamber configured to process a substrate; a precursor gas supply section for supplying a precursor gas; a reactant gas supply section for supplying a reactant gas; an exhauster for exhausting the process chamber; a plasma generator including first and second plasma generators for converting the reactant gas into plasma to activate the reactant gas, the first and second plasma generators being disposed so that a straight line passing through the center of the process chamber and the exhauster is interposed therebetween; and a gas rectifier including a first partition member disposed along an inner wall of the process chamber between the precursor gas supply section and the first plasma generator, and a second partition member disposed at an outer circumferential portion of the substrate along an inner wall of the process chamber between the precursor gas supply section and the second plasma generator.


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