The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2022

Filed:

Sep. 11, 2020
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Gareth Pryce Weale, New Hamburg, CA;

Jan Chochol, Usti nad Labem, CZ;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 3/28 (2006.01); H01L 31/0304 (2006.01); H01L 31/112 (2006.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
G01J 3/2803 (2013.01); H01L 27/1446 (2013.01); H01L 31/0304 (2013.01); H01L 31/03044 (2013.01); H01L 31/1129 (2013.01); G01J 2003/2813 (2013.01);
Abstract

A terahertz detector circuit can include a high electron mobility transistor (HEMT) having multiple gates that can be controlled by gate signals to generate a gate-induced modulation pattern in a two-dimensional electron gas (2DEG) of the HEMT. When the gate induced modulation pattern substantially matches a signal induced modulation pattern generated by an incident terahertz signal then a detection efficiency of the incident terahertz signal is improved. Accordingly, an electronically tunable THz detector with high efficiency can be realized. When these THz detectors are arranged in an array and electrically coupled, THz images and/or multi-spectral THz images may be generated.


Find Patent Forward Citations

Loading…