The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2022

Filed:

Aug. 25, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Joseph AuBuchon, San Jose, CA (US);

Sanjeev Baluja, Campbell, CA (US);

Dhritiman Subha Kashyap, Bangalore, IN;

Jared Ahmad Lee, San Jose, CA (US);

Tejas Ulavi, San Jose, CA (US);

Michael Rice, Pleasanton, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); C23C 16/46 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45536 (2013.01); C23C 16/4557 (2013.01); C23C 16/4583 (2013.01); C23C 16/4584 (2013.01); C23C 16/45544 (2013.01); C23C 16/45565 (2013.01); C23C 16/46 (2013.01); H01L 21/0228 (2013.01); H01L 21/67103 (2013.01); H01L 21/67115 (2013.01); H01L 21/67126 (2013.01); H01L 21/67167 (2013.01); H01L 21/67248 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01);
Abstract

Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.


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