The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2022

Filed:

Mar. 05, 2018
Applicant:

Lpkf Laser & Electronics Ag, Garbsen, DE;

Inventors:

Roman Ostholt, Langenhagen, DE;

Norbert Ambrosius, Garbsen, DE;

Arne Schnoor, Hannover, DE;

Daniel Dunker, Hannover, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B23K 26/53 (2014.01); C03C 15/00 (2006.01); B23K 26/00 (2014.01); B23K 26/0622 (2014.01); B23K 26/06 (2014.01); B23K 26/402 (2014.01); B41J 2/14 (2006.01); B41J 2/16 (2006.01); B81B 1/00 (2006.01); B81C 1/00 (2006.01); C03C 23/00 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
B23K 26/53 (2015.10); B23K 26/0006 (2013.01); B23K 26/06 (2013.01); B23K 26/0624 (2015.10); B23K 26/402 (2013.01); B41J 2/1433 (2013.01); B41J 2/162 (2013.01); B41J 2/1626 (2013.01); B81B 1/004 (2013.01); B81C 1/00087 (2013.01); C03C 15/00 (2013.01); C03C 23/0025 (2013.01); B23K 2103/50 (2018.08); B23K 2103/54 (2018.08); B81B 2201/052 (2013.01); B81B 2203/0353 (2013.01); B81C 2201/0143 (2013.01);
Abstract

A method for creating at least one recess, in particular an aperture, in a transparent or transmissive material, includes: selectively modifying the material along a beam axis by electromagnetic radiation; and creating the at least one recess by one or more etching steps, using different etching rates in a modified region and in non-modified regions. The electromagnetic radiation produces modifications having different characteristics in the material along the beam axis such that the etching process in the material is heterogeneous and the etching rates differ from one another in regions modified with different characteristics under unchanged etching conditions.


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