The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Oct. 24, 2018
École Centrale DE Lille, Villeneuve d'Ascq, FR;
Université Polytechnique Hauts-de-france, Valenciennes, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Yncrea Hauts DE France, Lille, FR;
Universite DE Lille, Lille, FR;
Alain Cappy, Genech, FR;
Francois Danneville, Lille, FR;
Virginie Hoel, Lomme, FR;
Christophe Loyez, Festubert, FR;
Ilias Sourikopoulos, Mons en Baroeul, FR;
ÉCOLE CENTRALE DE LILLE, Villeneuve d'Ascq, FR;
UNIVERSITÉ POLYTECHNIQUE HAUTS-DE-FRANCE, Valenciennes, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
YNCREA HAUTS DE FRANCE, Lille, FR;
UNIVERSITE DE LILLE, Lille, FR;
Abstract
An optical sensor, especially an artificial retina, that includes at least one photosensitive cell. Each cell includes a integration capacitor, a read circuit the operation of which depends on the charge of the integration capacitor, at least one MOS transistor operating subthreshold, and the drain-source current of which influences the charge on the integration capacitor, and at least one photodiode operating in photovoltaic mode and connected to the gate of this transistor, such that the drain-source current of the MOS transistor depends on the optical power received by the photodiode.