The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

Feb. 19, 2019
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventor:

Mari Saji, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H01L 41/047 (2006.01); H03H 9/145 (2006.01); H03H 9/25 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02866 (2013.01); H03H 9/02559 (2013.01); H03H 9/02834 (2013.01); H03H 9/14541 (2013.01); H03H 9/25 (2013.01); H01L 41/0477 (2013.01);
Abstract

In an elastic wave device, an IDT electrode is provided on a piezoelectric substrate and a first silicon oxide film covers the IDT electrode. A high-acoustic-velocity dielectric film covers the first silicon oxide film. A second silicon oxide film is provided on the high-acoustic-velocity dielectric film. The piezoelectric substrate is made of lithium niobate. The high-acoustic-velocity dielectric film propagates longitudinal waves at an acoustic velocity higher than an acoustic velocity of longitudinal waves propagating through the first silicon oxide film. The high-acoustic-velocity dielectric film is provided at a distance of about (t+t)×0.42 or less from a first main surface of the piezoelectric substrate in a thickness direction of the piezoelectric substrate.


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