The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Nov. 30, 2018
International Business Machines Corporation, Armonk, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Aspects of the invention are directed to a method of forming an integrated circuit. Both a dielectric layer and a bottom contact are formed with the bottom contact disposed at least partially in the dielectric layer. The bottom contact is subsequently recessed into the dielectric layer to cause the dielectric layer to define two sidewalls bordering regions of the bottom contact removed during recessing. Two sidewall spacers are then formed along the two sidewalls. A landing pad is formed on the recessed bottom contact and between the two sidewall spacers. Lastly, an additional feature is formed on top of the landing pad at least in part by anisotropic etching. In one or more embodiments, the additional feature includes a magnetic tunnel junction patterned at least in part by ion beam etching.