The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Jun. 05, 2020
Applicant:
Nikkiso Co., Ltd., Tokyo, JP;
Inventors:
Yusuke Matsukura, Ishikawa, JP;
Cyril Pernot, Ishikawa, JP;
Assignee:
Nikkiso Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/325 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/12 (2013.01);
Abstract
A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and an active layer that includes AlGaN and is located on the n-type cladding layer. Si concentration distribution in a direction of stacking the n-type cladding layer and the active layer has a local peak in the active layer.