The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
May. 04, 2020
University of Central Florida Research Foundation, Inc., Orlando, FL (US);
Ayman F. Abouraddy, Orlando, FL (US);
Massimo Maximilian L. Villinger, Orlando, FL (US);
Abbas Shiri, Orlando, FL (US);
Soroush Shabahang, Orlando, FL (US);
Ali K. Jahromi, Orlando, FL (US);
Chris H. Villinger, Orlando, FL (US);
UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC., Orlando, FL (US);
Abstract
A visibly transparent planar structure using a CPA scheme to boost the absorption of a multi-layer thin-film configuration, requiring no surface patterning, to overcome the intrinsic absorption limitation of the absorbing material. This is achieved in a multi-layer absorbing Fabry-Perot (FP) cavity, namely a thin-film amorphous silicon solar cell. Omni-resonance is achieved across a bandwidth of 80 nm in the near-infrared (NIR), thus increasing the effective absorption of the material, without modifying the material itself, enhancing it beyond its intrinsic absorption over a considerable spectral range. The apparatus achieved an increased external quantum efficiency (EQE) of 90% of the photocurrent generated in the 80 nm NIR region from 660 to 740 nm as compared to a bare solar cell. over the spectral range of interest.