The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Oct. 28, 2020
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventor:
Andrei Konstantinov, Sollentuna, SE;
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 29/808 (2006.01); H01L 29/66 (2006.01); H01L 29/80 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8083 (2013.01); H01L 29/0619 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7806 (2013.01); H01L 29/806 (2013.01); H01L 29/872 (2013.01);
Abstract
A power SiC MOSFET with a built-in Schottky rectifier provides advantages of including a Schottky rectifier, such as avoiding bipolar degradation, while reducing a parasitic capacitive charge and related power losses, as well as system cost. A lateral built-in channel layer may enable lateral spacing of the MOSFET gate oxide from a high electric field at the Schottky contact, while also providing current limiting during short-circuit events.